Double-decker MRAM cell with rotated reference layer...

Details Double-decker MRAM cell with rotated reference layer... Double-decker MRAM cell with rotated reference layer...

2007-02-20

2007-02-20

Tran, Long (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21665, C365S158000

Reexamination Certificate

active

11054854

ABSTRACT:
A double-decker MRAM cell is provided, including a stacked structure of first and second magnetic tunnel junctions. Each magnetic tunnel junction includes first and second free and fixed magnetic regions made of magnetic material separated by a first and second tunneling barrier layers made of non-magnetic material. The fixed magnetic regions are pinned by at least one pinning layer. The first and second fixed magnetizations are oriented in a same magnetic anisotropy axis and are inclined under an angle relative to at least one of said first and second free magnetizations.

REFERENCES:
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patent: 2004/0042263 (2004-03-01), Sharma et al.
Cullity, B.D., “Introduction to Magnetic Materials,” Addison-Wesley, pp. 238-240 (1972).

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