Double crucible crystal growing process

Details Double crucible crystal growing process Double crucible crystal growing process

1979-07-02

1981-01-20

Bernstein, Hiram

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617SP, C30B 1512

Patent

active

042460646

ABSTRACT:
The disclosure is directed to a double crucible Czochralski crystal semiconductor growing apparatus (10). An inner crucible (14) floats in a melt within an outer crucible (13) and a single crystal semiconductor billet (23) is pulled from the melt (16) in the inner crucible. An elongated tubular member (26), having at least one small aperture (33) in the wall thereof, provides a channel between the outer and inner crucibles. The tubular member (26) permits flow of the melt in the outer crucible (14) to the inner crucible (13) while inhibiting the diffusion of dopant material from the inner to outer crucible while any gas in the member will pass through the aperture (33).

REFERENCES:
patent: 2892739 (1959-06-01), Rusler
patent: 2944875 (1960-07-01), Leverton
patent: 3025191 (1962-03-01), Leverton
patent: 3305485 (1967-02-01), Burmeister et al.
patent: 3637439 (1972-01-01), DeBie
patent: 4036595 (1977-07-01), Lorenzini
Solid-State Electronics, 1960 vol. 5, pp. 131-134, Valcic.
Journal of Applied Physics, vol. 29, No. 8, 8/58, pp. 1241-1244.

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