Double-crown shape capacitor with high-dielectric constant mater

Details Double-crown shape capacitor with high-dielectric constant mater Double-crown shape capacitor with high-dielectric constant mater

1999-04-27

1999-12-28

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257309, H01L 27108

Patent

active

060085142

ABSTRACT:
A double-crown shaped capacitor of a dynamic random access memory cell is disclosed. The capacitor includes a first crown-shaped conductive region formed over a semiconductor substrate, wherein the first crown-shaped conductive region communicates to the semiconductor substrate via a hole. The capacitor also includes a second crown-shaped conductive region formed over the semiconductor substrate, wherein the inner sidewall of the second crown-shaped conductive region abuts on the outer sidewall of said first crown-shaped conductive region. Finally, the capacitor includes a dielectric layer covering the first crown-shaped conductive region and the second crown-shaped conductive region, and includes a conductive layer (138) formed on the dielectric layer.

REFERENCES:
patent: 5274258 (1993-12-01), Ahn
patent: 5753949 (1998-05-01), Honma et al.
Kaga et al., "Crown-Shaped Stacked-Capacitor Cell for 1.5-V Operation 64-Mb DRAM's" IEEE Transactions on Electron Devices, vol. 38, No. 2, Feb. 1991, p. 255-261.

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