Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-05-12
2000-07-18
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257534, 438241, H01L 27108, H01L 2976, H01L 29788
Patent
active
060910984
ABSTRACT:
The capacitor of the present invention mainly includes the storage node 52, the capacitor dielectric layer 54, and the conductive layer 56. The storage node 52 is formed on the semiconductor substrate 30, and the storage node 52 includes a base member 52a, two vertical members 52b, two horizontal members 52c, and two sidewall members 52d, in which the base member 52a provides a conductive communication to an underlying conductive region in the substrate 30, the two vertical members 52b respectively extends upward from two lateral ends of the base member 52a, the two horizontal members 52c respectively and outwardly extends from two top ends of the two vertical members 52b, and the two sidewall members 52d respectively and upwardly extending from two outward ends of said two horizontal members 52c. The dielectric layer 54 is covered on the storage node 52 and the conductive layer 56 is formed on the dielectric layer 54.
REFERENCES:
patent: 5278437 (1994-01-01), Wakamiya et al.
patent: 5434812 (1995-07-01), Tseng
patent: 5608247 (1997-03-01), Brown
patent: 5962886 (1999-10-01), Mori et al.
Acer Semiconductor Manufacturing Inc.
Monin, Jr. Donald L.
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