Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1998-08-03
2000-02-01
Nguyen, Kiet T.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
H01J 37244
Patent
active
06020592&
ABSTRACT:
Plasma doping apparatus includes a plasma doping chamber, a platen mounted in the plasma doping chamber for supporting a workpiece such as a semiconductor wafer, a source of ionizable gas coupled to the chamber, an anode spaced from the platen and a pulse source for applying high voltage pulses between the platen and the anode. The high voltage pulses produce a plasma having a plasma sheath in the vicinity of the workpiece. The high voltage pulses accelerate positive ions across the plasma sheath toward the platen for implantation into the workpiece. The plasma doping apparatus includes at least one Faraday cup positioned adjacent to the platen for collecting a sample of the positive ions accelerated across the plasma sheath. The sample is representative of the dose of positive ions implanted into the workpiece.
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Article by Erin C. Jones and Nathan W. Cheung, entitled "Plasma Doping Dosimetry," published in IEEE Transactions on Plasma Science in Feb. 1997, in vol. 25, No. 1, pp. 42-52.
Goeckner Matthew
Liebert Reuel B.
Pedersen Bjorn O.
Nguyen Kiet T.
Varian Semiconductor Equipment Associates Inc.
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