Doping of germanium and silicon crystals with non-hydrogenic acc

Details Doping of germanium and silicon crystals with non-hydrogenic acc Doping of germanium and silicon crystals with non-hydrogenic acc

1997-04-22

2000-01-04

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 43, 372 26, 372 37, 257607, H01S 319

Patent

active

060118105

ABSTRACT:
A method for doping semiconductors used for far infrared lasers with non-hydrogenic acceptors having binding energies larger than the energy of the laser photons. Doping of germanium or silicon crystals with beryllium, zinc or copper. A far infrared laser comprising germanium crystals doped with double or triple acceptor dopants permitting the doped laser to be tuned continuously from 1 to 4 terahertz and to operate in continuous mode. A method for operating semiconductor hole population inversion lasers with a closed cycle refrigerator.

REFERENCES:
patent: 3624553 (1971-11-01), Van-Tran
patent: 5784397 (1998-07-01), Kim et al.
Brundermann, E. et al., "Miniaturization of p-Ge Lasers: Progress Toward Continuous Wave Operation", Appl. Phys. Lett., 68 (10), pp. 1359-1361, Mar. 4, 1996.
Aslanov, G. A. et al., "Nonlinearity of the Photoconductivity of Germanium Doped with Mercury, Cobalt, and Zinc and Excited with (lambda)=10.6-(mu) m Radiation", Semiconductors 27 (2), pp. 154-157, Feb. 1993.
E. Brundermann, et al., Double Acceptor Doped Ge: A New Medium For Inter-valence-band Lasers, Appl. Phys. Lett., 68 (22) 3075-3077, (May 27, 1996).
Susumu Komiyama, et al., Polarization of the Far-infrared Laser Oscillation in p-Ge in Faraday Configuration, J. Appl. Phys., 62 (9) 3552-3558, (Nov. 1, 1987).
E. Brundermann, et al., Tunable Solid State P-Type Germanium Laser in the Frequency Range From 1 to 4 THz, Proc. 30th ESLAB Symp., 175-177 (Sep. 1996).
G. Sirmain, et al., Stimulated Far-Infrared Emission From Copper-doped Germanium Crystals, Appl. Phys. Lett., 70 (13), 1659-1661 (Mar. 31, 1997).
O. D. Dubon, et al., Terahertz Emission From p-Type Germanium Lasers Doped With Novel Acceptors, LBNL-39888, 1-7, Proc. 8th Int'l Symp. on Space Terahertz Technology, (Mar. 1997).

Affiliated with

Also associated with

Rating

Doping of germanium and silicon crystals with non-hydrogenic acc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Doping of germanium and silicon crystals with non-hydrogenic acc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Doping of germanium and silicon crystals with non-hydrogenic acc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1078326