Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound
Reexamination Certificate
2004-03-29
2008-10-21
Landau, Matthew C (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Group iii-v compound
C257S079000, C257S102000, C257SE21142, C257SE21152, C257SE21144
Reexamination Certificate
active
07439609
ABSTRACT:
An improved p-type gallium nitride-based semiconductor device is disclosed. The device includes a structure with at least one p-type Group III nitride layer that includes some gallium, a first silicon dioxide layer on the p-type layer, a layer of a Group II metal source composition on the first SiO2layer, and a second SiO2layer on the Group II metal source composition layer.
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Cree Inc.
Landau Matthew C
Summa, Allan & Additon, P.A.
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