Doping method and semiconductor device using the same

Details Doping method and semiconductor device using the same Doping method and semiconductor device using the same

2007-07-24

2007-07-24

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S558000, C438S562000

Reexamination Certificate

active

11005285

ABSTRACT:
The present invention achieves a shallow junction of a source and a drain, and provides a doping method which makes device properties reproducible and a semiconductor device fabricated using the method. In the present invention, doping for the semiconductor is conducted by attaching a molecular species with a higher electron affinity or lower ionization energy out of fullerene derivatives or metallocenes to the semiconductor surface to induce charge transfer from the molecule to the semiconductor.

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A. Ono et al., 2000,A 70 nm Gate Length CMOS Technology with 1.0 V Operation, 2000 Symposium on VLSI Technology Digest of Technical Papers.
Mizuno et al., 2001,Plasma Doping, vol. 70, No. 12, p. 1458-1462.
Muto et al., 2001,Electronic Materials and Parts, Guide Book of VLSI Production and Testing Equipment, p. 95-99, 2001.
K. Shibahara et al., 2001,Laser Doping, Sold State Devices and Materials, p. 236.

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