Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-21
2006-11-21
Richards, N. Drew (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S383000
Reexamination Certificate
active
07138688
ABSTRACT:
A doping method includes the step of attaching molecules or clusters to the surface of a semiconductor substrate to enable charge transfer from the molecules or clusters to the substrate surface, thereby inducing carriers underneath the substrate surface. A semiconductor device is fabricated through attachment of molecules or clusters to the surface of a semiconductor substrate. The attachment enables charge transfer from the molecules or clusters to the substrate surface to induce carriers underneath the substrate surface.
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Hiura Hidefumi
Kanayama Toshihiko
Miyazaki Takehide
National Institute of Advanced Industrial Science and Technology
NEC Corporation
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Richards N. Drew
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