Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2007-07-31
2007-07-31
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
With measuring or testing
C438S017000, C438S514000, C438S914000, C257SE21529, C257SE21521, C257SE29002, C257SE21147, C257SE21343, C257SE21043
Reexamination Certificate
active
10910623
ABSTRACT:
It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.
REFERENCES:
patent: 6778282 (2004-08-01), Smets et al.
patent: 2003/0017658 (2003-01-01), Nishitani et al.
patent: H11-23498 (1999-01-01), None
Yasuhiro Sato et al., “Study of HF-Treated Heavily-Doped Si Surface Using Contact Angle Measurements”, Japanese Journal of Applied Physics, vol. 33, Part 1, No. 12A, Dec. 1994, pp. 6508-6513.
Koezuka Junichi
Yamade Naoto
Costellia Jeffrey L.
Estrada Michelle
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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