Doping method

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate

Reexamination Certificate

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C257SE21090

Reexamination Certificate

active

07989323

ABSTRACT:
Methods of doping a III-V compound semiconductor film are disclosed.

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Dittmar et al, “Cyclopentadienyl Germanes as Novel precursors for the CVD of Thin germainium Films” Chemical vapor Deposition 2001, 7 No. 5 , pp. 193-195.
Green et al.; “Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy”; Journal of Applied Physics; vol. 95, No. 12; Jun. 15, 2004; pp. 8456-8462.
Armstrong et al.; “Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition”; Applied Physics Letters; vol. 84, No. 3; Jun. 19, 2004; pp. 374-376.

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Curious One

Solves the problem in doping semiconductors with new technique that is not thought before.

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