Doping apparatus, doping method, and method for fabricating...

Coating apparatus – With indicating – testing – inspecting – or measuring means

Reexamination Certificate

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C438S014000, C438S252000, C438S514000, C438S914000, C257SE21529, C257SE21521, C257SE29022, C257SE21147, C257SE21343, C257SE21043, C261S034100, C118S696000, C118S708000

Reexamination Certificate

active

07980198

ABSTRACT:
It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.

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Chinese Office Action (Application No. 200410056427.X; CN07305), dated Nov. 6, 2009, with English translation.
Yasuhiro Sato et al., “Study of IIF-Treated IIeavily-Doped Si Surface Using Contact Angle Measurements”, Japanese Journal of Applied Physics, vol. 33, Part 1, No. 12A, Dec. 1994, pp. 6508-6513.

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