Coating apparatus – With indicating – testing – inspecting – or measuring means
Reexamination Certificate
2011-07-19
2011-07-19
Estrada, Michelle (Department: 2823)
Coating apparatus
With indicating, testing, inspecting, or measuring means
C438S014000, C438S252000, C438S514000, C438S914000, C257SE21529, C257SE21521, C257SE29022, C257SE21147, C257SE21343, C257SE21043, C261S034100, C118S696000, C118S708000
Reexamination Certificate
active
07980198
ABSTRACT:
It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.
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Chinese Office Action (Application No. 200410056427.X; CN07305), dated Nov. 6, 2009, with English translation.
Yasuhiro Sato et al., “Study of IIF-Treated IIeavily-Doped Si Surface Using Contact Angle Measurements”, Japanese Journal of Applied Physics, vol. 33, Part 1, No. 12A, Dec. 1994, pp. 6508-6513.
Koezuka Junichi
Yamade Naoto
Costellia Jeffrey L.
Estrada Michelle
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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