Doped semiconductor wafer of float zone pulled semiconductor...

Details Doped semiconductor wafer of float zone pulled semiconductor... Doped semiconductor wafer of float zone pulled semiconductor...

2006-04-11

2006-04-11

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having moving solid-liquid-solid region

C117S050000, C117S052000, C117S931000

Reexamination Certificate

active

07025827

ABSTRACT:
A doped semiconductor wafer of float zone-pulled semiconductor material contains a dopant added to a molten material and has a radial macroscopic resistance distribution of less than 12% and striations of −10% to +10%. There is also a process for producing a doped semiconductor wafer by float zone pulling of a single crystal and dividing up the single crystal, in which process, during the float zone pulling, a molten material which is produced using an induction coil is doped with a dopant. It is exposed to at least one rotating magnetic field and is solidified. The single crystal which is formed during the solidification of the molten material is rotated. The single crystal and the magnetic field are rotated with opposite directions of rotation and the magnetic field has a frequency of 400 to 700 Hz.

REFERENCES:
patent: 5258092 (1993-11-01), Yamagishi et al.
patent: 5349921 (1994-09-01), Barraclough et al.
patent: 5556461 (1996-09-01), Kimura et al.
patent: 2002/0022348 (2002-02-01), Sakaguchi et al.
patent: 263310 (1988-12-01), None
patent: 10051885 (2002-05-01), None
patent: 0504929 (1992-09-01), None
English Derwent Abstract AN 1989-158229 corresponding to DD 263310.
English Derwent Abstract AN 2002-395730 corresponding to DE 10051885.

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