Doped nanoparticle semiconductor charge transport layer

Details Doped nanoparticle semiconductor charge transport layer Doped nanoparticle semiconductor charge transport layer

2007-01-29

2009-02-24

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from liquid combined with preceding diverse...

C438S492000, C438S502000, C977S892000, C117S056000, C257SE21114, C257SE21120, C257SE21132, C257SE21133

Reexamination Certificate

active

07494903

ABSTRACT:
A method is disclosed for making a doped semiconductor transport layer for use in an electronic device comprising: growing in-situ doped semiconductor nanoparticles in a colloidal solution; depositing the in-situ doped semiconductor nanoparticles on a surface; and annealing the deposited in-situ doped semiconductor nanoparticles so that the organic ligands boil off the surface of the in-situ doped semiconductor nanoparticles.

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