Doped nanoparticle-based semiconductor junction

Details Doped nanoparticle-based semiconductor junction Doped nanoparticle-based semiconductor junction

2007-02-26

2009-10-20

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from liquid combined with subsequent diverse...

C438S492000, C438S499000, C977S892000, C117S056000, C257SE21120, C257SE21133

Reexamination Certificate

active

07605062

ABSTRACT:
A doped semiconductor junction for use in an electronic device and a method for making such junction is disclosed. The junction includes a first polycrystalline semiconductor layer doped with donors or acceptors over a substrate such that the first doped semiconductor layer has a first polarity, the first layer including fused semiconductor nanoparticles; and a second layer in contact with the first semiconductor layer over a substrate to form the semiconductor junction.

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