Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from liquid combined with preceding diverse...
Reexamination Certificate
2011-03-29
2011-03-29
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from liquid combined with preceding diverse...
C977S847000, C977S892000
Reexamination Certificate
active
07915151
ABSTRACT:
A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor.
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Cui Yi
Duan Xiangfeng
Huang Yu
Lieber Charles M.
Coleman W. David
President and Fellows of Harvard College
Wolf Greenfield & Sacks P.C.
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