Dopant interface formation

Details Dopant interface formation Dopant interface formation

2005-01-11

2005-01-11

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

C438S106000

Reexamination Certificate

active

06841458

ABSTRACT:
Formation of an interconnect circuit feature having a metal and an electropositive dopant. The interconnect feature may contain an accumulation of the electropositive dopant at interface boundaries of the interconnect feature to reduce electromigration of the metal during operation. In a method the interconnect feature may be heated to drive a portion of the electropositive dopant to the interfaces.

REFERENCES:
patent: 5976928 (1999-11-01), Kirlin et al.
patent: 6063506 (2000-05-01), Andricacos et al.
patent: 6211035 (2001-04-01), Moise et al.
patent: 6404003 (2002-06-01), McMillan et al.
patent: 6444542 (2002-09-01), Moise et al.
patent: 6518070 (2003-02-01), Alluri et al.
patent: 6518184 (2003-02-01), Chambers et al.
patent: 20020084529 (2002-07-01), Dubin et al.
patent: WO 0245142 (2002-06-01), None
Search Report for PCT/US 03/27792 mailed Jan. 21, 2004, 4 pages.

Affiliated with

Also associated with

Rating

Dopant interface formation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dopant interface formation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dopant interface formation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3386302