Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2003-08-14
2004-12-07
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S068000
Reexamination Certificate
active
06828613
ABSTRACT:
FIELD OF THE TECHNOLOGY
The present invention relates generally to microelectronic device processing, and in particular to the use of doped metal in fabricating microelectronic devices.
BACKGROUND OF THE RELATED ART
In the fabrication of semiconductor devices, various materials may be deposited on a substrate for various purposes. For example, inter-layer dielectric (ILD) material may be deposited and patterned with trenches. Metal material may then be placed in the trenches to form interconnect lines, or “traces”.
A barrier layer is often first formed within the trenches in an attempt to prevent diffusion of metal ions into the ILD material or the substrate during device operation. For example, a barrier layer of tantalum may first be deposited on the bottom and sides of a trench before filling in the remainder of the trench with a conductive metal material such as copper. This barrier layer may prevent ions of the conductive metal from diffusing beyond the trenches when current flows in the metal line during operation of the circuit. This diffusion, often referred to as electromigration, may eventually lead to the formation of voids in the metal lines, which may cause degraded operation or even failure of the device. Thus, the initial deposition of a barrier layer may be used to reduce electromigration over the expected operational life of the integrated circuit.
Unfortunately, a barrier layer formed as indicated above does not completely prevent diffusion or migration of all metal ions. For example, where copper is the metal deposited, even tantalum, a fairly good barrier for copper, is not able to prevent a significant amount of migration of copper ions out of the trenches. Copper is highly desirable for metal lines because it has high electrical conductivity and is easy to handle in the manufacturing operations. But it is also highly diffusive and often difficult to entirely isolate. As a result, the likelihood of electromigration-induced voids forming in copper metal lines formed in the convention manner is undesirably high.
REFERENCES:
patent: 5976928 (1999-11-01), Kirlin et al.
patent: 6063506 (2000-05-01), Andricacos et al.
patent: 6211035 (2001-04-01), Moise et al.
patent: 6404003 (2002-06-01), McMillan et al.
patent: 6444542 (2002-09-01), Moise et al.
patent: 6518070 (2003-02-01), Alluri et al.
patent: 6518184 (2003-02-01), Chambers et al.
patent: 2002/0084529 (2002-07-01), Dubin et al.
patent: WO 02/45142 (2002-06-01), None
Search Report for PCT/US 03/27792 mailed Jan. 21, 2004, 4 pages.
Dubin Valery M.
Faber Jacob M.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Nhu David
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