Dopant-independent polysilicon plasma etch

Details Dopant-independent polysilicon plasma etch Dopant-independent polysilicon plasma etch

1989-11-14

1991-02-12

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156653, 156662, 437937, 20419237, H01L 21306

Patent

active

049921347

ABSTRACT:
A plasma etching process is provided which etches n-type, p-type, and intrinsic polysilicon on the same wafer at substantially the same rate. Native oxide is first removed by etching in a conventional oxide etchant, such as SiCl.sub.4 /Cl.sub.2, BCl.sub.3 /Cl.sub.2, CCl.sub.4, other mixtures of fluorinated or chlorinated gases, and mixtures of Freon-based gases. The polysilicon is then etched in an etchant comprising at least about 75% hydrogen and the balance a halogen-containing fluid, such as chloride. The silicon etchant etches at a rate of about 300 to 500 .ANG. for a batch of 10 wafers, depending on hydrogen concentration, power, flow rate of gas mixture, and gas pressure.

REFERENCES:
patent: 4255230 (1981-03-01), Zajac
patent: 4361461 (1982-11-01), Chang
patent: 4462863 (1984-07-01), Nishimatsu et al.
patent: 4601278 (1986-07-01), Robb
patent: 4610731 (1986-09-01), Chevallier et al.
Wolf et al., Silicon Processing for the VLSI ERA, p. 520, vol. 1, Lattice Press.

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