Dopant barrier for doped glass in memory devices

Details Dopant barrier for doped glass in memory devices Dopant barrier for doped glass in memory devices

2004-12-03

2008-08-12

Nguyen, Dao H. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S758000, C257SE21280, C257SE23160

Reexamination Certificate

active

07411255

ABSTRACT:
A semiconductor device has a diffusion barrier formed between a doped glass layer and surface structures formed on a substrate. The diffusion barrier includes alumina and optionally a nitride, and has a layer thickness satisfying the high aspect ratio of the gaps between the surface structures, while adequately preventing dopants in doped glass layer from diffusing out of the doped glass layer to the surface structures and the substrate. Further, heavy water can be used during the formation of the alumina so that deuterium may be accomplished near the interface of surface structures and the substrate to enhance the performance of the device.

REFERENCES:
patent: 4045302 (1977-08-01), Gibbs et al.
patent: 4789426 (1988-12-01), Pipkin
patent: 4886765 (1989-12-01), Chen et al.
patent: 4956313 (1990-09-01), Cote et al.
patent: 5225372 (1993-07-01), Savkar et al.
patent: 5262354 (1993-11-01), Cote et al.
patent: 5381046 (1995-01-01), Cederbaum et al.
patent: 5719072 (1998-02-01), Sugiura et al.
patent: 5915175 (1999-06-01), Wise
patent: 6026465 (2000-02-01), Mills et al.
patent: 6147014 (2000-11-01), Lyding et al.
patent: 6156630 (2000-12-01), Iyer
patent: 6204172 (2001-03-01), Marsh
patent: 6387726 (2002-05-01), Verlinden et al.
patent: 6524918 (2003-02-01), Park et al.
patent: 6531730 (2003-03-01), Sandhu et al.
patent: 6534809 (2003-03-01), Moise et al.
patent: 6579796 (2003-06-01), Ying et al.
patent: 6602117 (2003-08-01), Chopra et al.
patent: 6784503 (2004-08-01), Shimizu et al.
patent: 6833575 (2004-12-01), Parekh et al.
patent: 7132371 (2006-11-01), Parekh et al.
patent: 2002/0096771 (2002-07-01), Yamada et al.
patent: 2003/0045082 (2003-03-01), Eldridge et al.
patent: 2005/0032314 (2005-02-01), Parekh et al.

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