Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-10-18
2005-10-18
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S680000
Reexamination Certificate
active
06955985
ABSTRACT:
A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature Tgrowth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature Tanneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness hc. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.
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Hamilton Brook Smith & Reynolds P.C.
Kopin Corporation
Nhu David
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