DNA biosensor and methods for making and using the same

Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21521

Reexamination Certificate

active

07615780

ABSTRACT:
Disclosed herein are biosensors and methods for making and using the same. In one embodiment, the sensor for detecting an analyte comprises: a substrate, recognition elements specific for the analyte, an excitation source, a detector, a chamber located between the substrate and the excitation source and between the substrate and the detector, and an emission filter. The recognition elements are tethered to the substrate such that the recognition elements can be exposed to a sample. The excitation source is capable of emitting a first light having a first light peak intensity at a first wavelength, wherein the first light can excite a luminophore to emit a second light when the recognition elements interact with the analyte. The detector is capable of detecting the second light emitted by the luminophore. The emission filter is capable of filtering in a band gap that includes the first light peak intensity.

REFERENCES:
patent: 5491225 (1996-02-01), Picone et al.
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5637531 (1997-06-01), Porowski et al.
patent: 5708957 (1998-01-01), Chuang et al.
patent: 5770887 (1998-06-01), Tadatomo et al.
patent: 5810925 (1998-09-01), Tadatomo et al.
patent: 5962875 (1999-10-01), Motoki et al.
patent: 5968739 (1999-10-01), Macioszek et al.
patent: 5981980 (1999-11-01), Miyajima et al.
patent: 6015979 (2000-01-01), Sugiura et al.
patent: 6031858 (2000-02-01), Hatakoshi et al.
patent: 6140669 (2000-10-01), Lozykowski et al.
patent: 6181721 (2001-01-01), Geels et al.
patent: 6225650 (2001-05-01), Tadatomo et al.
patent: 6255669 (2001-07-01), Birkhahn et al.
patent: 6281526 (2001-08-01), Nitta et al.
patent: 6294440 (2001-09-01), Tsuda et al.
patent: 6316785 (2001-11-01), Nunoue et al.
patent: 6362496 (2002-03-01), Nanishi et al.
patent: 6413627 (2002-07-01), Motoki et al.
patent: 6492182 (2002-12-01), Bright et al.
patent: 6582966 (2003-06-01), Bright et al.
patent: 6596079 (2003-07-01), Vaudo et al.
patent: 6610848 (2003-08-01), Pilato et al.
patent: 6680206 (2004-01-01), McDevitt et al.
patent: 6686691 (2004-02-01), Mueller et al.
patent: 6700179 (2004-03-01), Ouchi et al.
patent: 6830888 (2004-12-01), Cockerill et al.
patent: 6936488 (2005-08-01), D'Evelyn et al.
patent: 7009215 (2006-03-01), D'Evelyn et al.
patent: 7053413 (2006-05-01), D'Evelyn et al.
patent: 7054002 (2006-05-01), Sevick-Muraca et al.
patent: 7098487 (2006-08-01), D'Evelyn et al.
patent: 7102158 (2006-09-01), Tysoe et al.
patent: 7119372 (2006-10-01), Stokes et al.
patent: 7122827 (2006-10-01), Alizadeh et al.
patent: 7125453 (2006-10-01), D'Evelyn et al.
patent: 2004/0195598 (2004-10-01), Tysoe et al.
patent: 2000/022212 (2000-01-01), None
patent: WO 01/09604 (2001-02-01), None
patent: 0124285 (2001-04-01), None
patent: 0137351 (2001-05-01), None
The Handbook—a Guide to Fluorescent Probes And Labeling Technologies; 10the Edition; Chapter 8: Nucleic Acid Detection and Genomics Technology; http://probes.invitrogen.com/handbook/.
Pelzmann et al., “Blue Light/Emitting Diodes on GaN Substrates, Growth and Characteriza/Tion”; Journal of Crystal Grown 189/190 (1998) 167/171.
Kamp et al.; “GaN Homoepitaxy for Device Applications”; MRS internet J. Nitride Semicond. Res. 4S1, G10.2 (1999).
Porowski; “High Pressure Crystallization of III/V itrides”; ACTA Physics Polonica A, vol. 87 (1995).
Webster, J.R., et al.; “Monolithic Capillary Electrophoresis Device with Integrated Fluorescence Detector”; Center for Integrated Microsystems; Department of Electrical Engineering and Computer Science; Department Of chemical Engineering; Department of Genetics; University of Michigan, Ann Arbor MI 48109/2122, USA; Apr. 16, 2000.
U.S. Appl. No. 09/683,658, filed Jan. 31, 2002.
Bertram et al., “Strain Relaxation and Strong Impurity Incorporation in Epitaxial Laterally Overgrown GaN: Direct Imaging of Different Growth Domains by Cathodoluminescence Microscopy and Micro-Raman Spectroscopy”; Applied Physics Letters, vol. 74, No. 3, pp. 359-361, Jan. 18, 1999.
Fini et al., “In Situ, Real-Time Measurement of Wing Tilt During Lateral Epitaxial Overgrowth of GaN”; Applied Physics Letters, vol. 76, No. 26, pp. 3893-3894, Jun. 26, 2000.
Fini et al., “Determination of Tilt in the Lateral Epitaxial Overgrowth of GaN Using X-Ray Diffraction”; Journal of Crystal Growth, vol. 209, pp. 581-590, 2000.
Honda et al., “Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves”, Japanese Journal of Applied Physics, vol. 38, Part 2, No. 11B, pp. L1299-L1302, Nov. 15, 1999.
Horibuchi et al., “Behavior of Threading Dislocations in SAG-GaN Grown by MOVPE”; Threading Dislocations in SAG-GaN, Phys. Stat. Sol. (a), vol. 180, pp. 171-175, 2000.
Kim et al., “Crystal Tilting in GaN Grown by Pendoepitaxy Method on Sapphire Substrate”; Applied Physics Letters, vol. 75, No. 26, pp. 4109-4111, Dec. 27, 1999.
Kuan et al., “Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy”; F99W2.6, pp. 1-6.
Marchand et al., “Microstructure of GaN Laterally Overgrown by Metalorganic Chemical Vapor Depostition”; vol. 73, No. 6, pp. 747-749, Aug. 10, 1998.
Sakai et al., “Transmission Electron Microscopy of Defects in GaN Films Formed by Epitaxial Lateral Overgrowth”; vol. 73, No. 4, pp. 481-483, Jul. 27, 1998.
Song et al., “Lateral Epitaxial Overgrowth of GaN and Its Crystallographic Tilt Depending on the Growth Condition”; Lateral Epitaxial Overgrowth of GaN, Phys. Stat. Sol. (a) , vol. 180, pp. 247-250, 2000.
Tomiya et al., “Dependence of Crystallographic Tilt and Defect Distribution on Mask Material in Epitaxial Lateral Overgrown GaN Layers”; Applied Physics Letters, vol. 77, No. 5, pp. 636-638, Jul. 31, 2000.
Van de Walle, Chris G., “Interactions of Hydrogen with Native Defects in GaN”; Rapid Communications, Physical Review B, vol. 56, No. 16, pp. R10 020-R10 023, Oct. 15, 1997.
Weinstein et al., “Hydrogen-Decorated Lattice Defects in Proton Implanted GaN”; Applied Physics Letters, vol. 72, No. 14, pp. 1703-1705, Apr. 6, 1998.
Vaudo et al., “GaN Boule Growth: A Pathway to GaN Wafers with Improved Material Quality”; Phys. Stat. Sol. (a), vol. 194, No. 2, pp. 494-497, 2002.
Yasan et al., “Comparison of Ultraviolet Light-Emitting Diodes with Peak Emission at 340nm Grown on GaN Substrate and Sapphire”; Applied Physics Letters, vol. 81, No. 12, pp. 2151-2153, Sep. 16, 2002.
Grzegory et al., “Blue Laser on High N2 Pressure-Grown Bulk GaN”; ACTA Physica Polonica A, vol. 100, pp. 229-232, 2001.
Prystawko et al., “Blue-Laser Structures Grown on Bulk GaN Crystals”; Phys. Stat. Sol (a), vol. 192, No. 2, pp. 320-324, 2002.
Porowski et al., “High Resistivity GaN Single Crystalline Substrates”; ACTA Physica Polonica A, vol. 92, No. 5, pp. 958-962, 1997.
Pankove et al., “Molecular Doping of Gallium Nitride”; Applied Physics Letters, vol. 74, No. 3, pp. 416-418, Jan. 18, 1999.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

DNA biosensor and methods for making and using the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with DNA biosensor and methods for making and using the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and DNA biosensor and methods for making and using the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4053267

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.