Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-09-15
1999-10-26
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257330, H01L 2978
Patent
active
059733616
ABSTRACT:
A new transistor cell is disclosed in this invention which is formed in a semiconductor substrate with a drain region of a first conductivity type formed at a bottom surface of the substrate. The DMOS cell includes a polysilicon layer constituting a gate supported on a top surface of the substrate, the gate surrounding and defining an outer boundary of the transistor cell having a removed polysilicon opening disposed substantially in a central portion of the cell. The DMOS cell further includes a source region of the first conductivity disposed in the substrate near edges of the removed polysilicon opening with a portion extends underneath the gate. The DMOS cell further includes a body region of a second conductivity type disposed in the substrate occupying an entire region under the removed polysilicon opening thus encompassing the source region and having a portion extends underneath the gate. The body region defining substantially a merged-double-U-shaped region including a left-U-shaped implant region and a right-U-shaped implant region and a merged region disposed substantially at a central portion under the removed polysilicon opening. In a preferred embodiment, the merged double-U-shaped region constituting the body region further includes a deep high concentration body dopant region and a shallow high concentration body dopant region.
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Hshieh Fwu-Iuan
Nim Danny Chi
So Kong Chong
Hardy David B.
Lin Bo-In
Magepower Semiconductor Corporation
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