DMOS transistors having trenched gate oxide

Details DMOS transistors having trenched gate oxide DMOS transistors having trenched gate oxide

1996-02-27

1998-06-09

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257334, 257337, 257338, H01L 2976, H01L 2994

Patent

active

057639159

ABSTRACT:
Improved power MOSFET structure, and fabrication process are disclosed in this invention to achieve cost savings by simplified device structure and fabrication processes, and also by reducing the required die size. Specifically, in a novel MOSFET device, insulation of mobile ions are achieved by extending the poly gate and metal contacts such that the passivation layer is no longer required and the fabrication process is simplified such that the MOSFET device can be manufactured at a lower price. Furthermore, in another MOSFET device, the gate runner is used to replace the field plate such that the requirement of a field plate as that in a conventional MOSFET device is also eliminated and, by reducing the die size, the cost of manufacture is further reduced.

REFERENCES:
patent: 4547791 (1985-10-01), Roger et al.
patent: 5541425 (1996-07-01), Nishihara

Affiliated with

Also associated with

Rating

DMOS transistors having trenched gate oxide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with DMOS transistors having trenched gate oxide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and DMOS transistors having trenched gate oxide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2203351