DMOS-transistor with lateral dopant gradient in drift region...

Details DMOS-transistor with lateral dopant gradient in drift region... DMOS-transistor with lateral dopant gradient in drift region...

2006-06-20

2006-06-20

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S343000, C257S655000

Reexamination Certificate

active

07064385

ABSTRACT:
A DMOS-transistor has a trench bordered by a drift region including two doped wall regions and a doped floor region extending along the walls and the floor of the trench. The laterally extending floor region has a dopant concentration gradient in the lateral direction. For example, the floor region includes at least two differently-doped floor portions successively in the lateral direction. This dopant gradient in the floor region is formed by carrying out at least one dopant implantation from above through the trench using at least one mask to expose a first area while covering a second area of the floor region.

REFERENCES:
patent: 4523369 (1985-06-01), Nagakubo
patent: H204 (1987-02-01), Oh et al.
patent: 4682405 (1987-07-01), Blanchard et al.
patent: 4756793 (1988-07-01), Peek
patent: 4808543 (1989-02-01), Parrillo et al.
patent: 4893160 (1990-01-01), Blanchard
patent: 4975384 (1990-12-01), Baglee
patent: 5317432 (1994-05-01), Ino
patent: 5338965 (1994-08-01), Malhi
patent: 5387534 (1995-02-01), Prall
patent: 5406111 (1995-04-01), Sun
patent: 5434435 (1995-07-01), Baliga
patent: 5466616 (1995-11-01), Yang
patent: 5482873 (1996-01-01), Yang
patent: 5539238 (1996-07-01), Malhi
patent: 5569949 (1996-10-01), Malhi
patent: 5696010 (1997-12-01), Malhi
patent: 5763915 (1998-06-01), Hshieh et al.
patent: 5780353 (1998-07-01), Omid-Zohoor
patent: 5844275 (1998-12-01), Kitamura et al.
patent: 5846866 (1998-12-01), Huang et al.
patent: 5869875 (1999-02-01), Hebert
patent: 5874346 (1999-02-01), Fulford, Jr. et al.
patent: 5882966 (1999-03-01), Jang
patent: 5902127 (1999-05-01), Park
patent: 5915195 (1999-06-01), Fulford, Jr. et al.
patent: 5929481 (1999-07-01), Hshieh et al.
patent: 5960276 (1999-09-01), Liaw et al.
patent: 6001678 (1999-12-01), Takahashi
patent: 6040597 (2000-03-01), Kim et al.
patent: 6072216 (2000-06-01), Williams et al.
patent: 6150235 (2000-11-01), Doong et al.
patent: 6184566 (2001-02-01), Gardner et al.
patent: 6187651 (2001-02-01), Oh
patent: 6190954 (2001-02-01), Lee et al.
patent: 6228726 (2001-05-01), Liaw
patent: 6232636 (2001-05-01), Simpson et al.
patent: 6242788 (2001-06-01), Mizuo
patent: 6495294 (2002-12-01), Yamauchi et al.
patent: 6518127 (2003-02-01), Hshieh et al.
patent: 6613651 (2003-09-01), Puchner et al.
patent: 6780713 (2004-08-01), Bromberger et al.
patent: 2003/0001202 (2003-01-01), Kitamura
patent: 2003/0003638 (2003-01-01), Bromberger et al.
patent: 2003/0003643 (2003-01-01), Bromberger et al.
patent: 2003/0003669 (2003-01-01), Bromberger et al.
patent: 2003/0122188 (2003-07-01), Blanchard
patent: 19733974 (1998-08-01), None
patent: 69316256 (1998-08-01), None
patent: 10131705 (2001-06-01), None
patent: 10220810 (2002-11-01), None
patent: 10131706 (2003-01-01), None
patent: 10131707 (2003-01-01), None
patent: 0176778 (1986-04-01), None
patent: 0209949 (1987-01-01), None
patent: 0232322 (1987-08-01), None
patent: 0547711 (1993-06-01), None
patent: 0562271 (1993-09-01), None
patent: 0837509 (1998-04-01), None
patent: 0905784 (1999-03-01), None
patent: 55130173 (1980-10-01), None
patent: 56040280 (1981-04-01), None
patent: 56050558 (1981-05-01), None
patent: 56062365 (1981-05-01), None
patent: 56085857 (1981-07-01), None
patent: 58204569 (1983-11-01), None
patent: 61161732 (1986-07-01), None
patent: 03082071 (1991-04-01), None
patent: 03084925 (1991-04-01), None
patent: 2000012842 (2000-01-01), None

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