DMOS transistor

Details DMOS transistor DMOS transistor

2007-12-04

2007-12-04

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S336000, C257S338000, C257SE39016, C257SE39019, C257SE39020

Reexamination Certificate

active

10487174

ABSTRACT:
A lateral CMOS-compatible RF-DMOS transistor (RFLDMOST) with low ‘on’ resistance, characterised in that disposed in the region of the drift space (20) which is between the highly doped drain region (5) and the control gate (9) and above the low doped drain region LDDR (22, 26) of the transistor is a doping zone (24) which is shallow in comparison with the penetration depth of the source/drain region (3, 5), of inverted conductivity type to the LDDR (22, 26) (hereinafter referred to as the inversion zone) which has a surface area-related nett doping which is lower than the nett doping of the LDDR (22, 26) and does not exceed a nett doping of 8E12 At/cm2.

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High Performance RF LDMOS Transistors with 5nm Gate Oxide in a 0.25um SiGe;C BiCMOS Technology; K. Ehwald, et al; IHP, Im Technologiepark 25, 15236 Frankfurt, Germany, (Publication date to be supplied),

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