Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-03-26
1998-11-17
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257344, 257346, H01L 2978, H01L 2990
Patent
active
058380426
ABSTRACT:
A DMOS device structure includes a lightly doped semiconductor layer of a first conductivity type, a plurality of lightly doped semiconductor regions of a second conductivity type extending from a top surface of the lightly doped semiconductor layer thereinto, source regions of the first conductivity type contained in the lightly doped semiconductor regions and defining channel regions. The lightly doped semiconductor regions are contained in respective enhancement regions of the lightly doped semiconductor layer of the same conductivity type as, but with a lower resistivity than, the lightly doped semiconductor layer.
REFERENCES:
patent: 4376286 (1983-03-01), Lidow et al.
patent: 4593302 (1986-06-01), Lidow et al.
patent: 4613883 (1986-09-01), Tihanyi
patent: 4644637 (1987-02-01), Temple
patent: 4774198 (1988-09-01), Contiero et al.
patent: 4884113 (1989-11-01), Muramoto
patent: 4928155 (1990-05-01), Nakagawa et al.
patent: 4974059 (1990-11-01), Kinzer
patent: 4975751 (1990-12-01), Beasom
patent: 5338693 (1994-08-01), Kinzer et al.
patent: 5382538 (1995-01-01), Zambrano et al.
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
Monin Donald
LandOfFree
DMOS device structure, and related manufacturing process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with DMOS device structure, and related manufacturing process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and DMOS device structure, and related manufacturing process will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-886974