Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-22
2005-11-22
Nguyen, Ha (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S507000, C257SE21339, C257SE21563, C438S480000
Reexamination Certificate
active
06967376
ABSTRACT:
A method of fabricating a silicon-on-insulator (SOI) having a superficial Si-containing layer that has a reduced number of tile and divot defects is provided. The method includes the steps of: implanting oxygen ions into a surface of a Si-containing substrate, the implanted oxygen ions having a concentration sufficient to form a buried oxide region during a subsequent annealing step; and annealing the substrate containing implanted oxygen ions under conditions wherein the implanted oxygen ions form a buried oxide region which electrically isolates a superficial Si-containing layer from a bottom Si-containing layer. Moreover, the annealing conditions employed are capable of reducing the number of tile or divot defects present in the superficial Si-containing layer so as to allow optical detection of any other defect that has a lower density than the tile or divot defect. The present invention also relates to the SOI substrate that is produced using the inventive method.
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Fox Stephen R.
Garg Neena
Giewont Kenneth J.
Lee Junedong
Sadana Devendra K.
Nguyen Ha
Pompey Ron
Scully Scott Murphy & Presser
Trepp, Esq. Robert M.
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