Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-14
2005-06-14
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C501S134000, C501S136000
Reexamination Certificate
active
06906375
ABSTRACT:
This invention provides compositions of the formula EuCu3M4O12wherein M is Ge, Ti, Sn or mixtures thereof. These compositions have high dielectric constant and low loss over a frequency range of from 1 kHz to 1 MHz.
REFERENCES:
patent: 4309295 (1982-01-01), McSweeney
patent: 4545929 (1985-10-01), Masuyama et al.
patent: 63256519 (1988-10-01), None
patent: 2528117 (1996-06-01), None
Patent Abstracts of Japan, Feb. 13, 1989, vol. 013, No. 063.
Das, B.P., et al., “Effect of Europium on Structural, Dielectric and Electrical Properties of Pb(SnTi) 03 ferroelectric ceramics”, Materials Science and Engineering B, Elsevier Sequota, Lausanne, Nov. 15, 2003, pp. 96-105, CH, vol. 104, No. 1-2.
Dickey Thomas L.
E. I. du Pont de Nemours and Company
Tran Minhloan
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