Distributed threshold voltage field effect transistor

Details Distributed threshold voltage field effect transistor Distributed threshold voltage field effect transistor

1991-09-30

1993-11-30

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 57, 257315, 257316, 307491, 307304, 307571, 307584, H01L 2968, H01L 2978, H01L 2992

Patent

active

052668207

ABSTRACT:
A distributed threshold voltage TFT has a first FET and a second FET connected in series with the first point between the first and the second FET via a series circuit of a first capacitance and a second capacitance. The gate of the second FET is connected to the junction point between the first and the second capacitance and to the gate of the first FET via a non-linear resistance with a low R.sub.on and a high R.sup.off. Leakage currents can be kept very low in this DTV FET without an extra external voltage and/or without extra doping.

REFERENCES:
patent: 4571503 (1986-02-01), Tobita
patent: 5113091 (1992-05-01), Hsu et al.

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