Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1987-11-04
1988-09-20
LaRoche, Eugene R.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330 54, 330286, H03F 316, H03F 360
Patent
active
047728582
ABSTRACT:
A distributed circuit includes a plurality of field effect transistors (FETS), each one of such FETS having gate, drain and source electrodes, with a first portion, or a first channel, of such FETS having gate electrodes and drain electrodes successively coupled between a first input terminal and an output terminal, and a second like portion or a second channel of such FETS having gate electrodes and drain electrodes successively coupled between a second input terminal and said output terminal. Separate bias circuits are provided to the input electrodes of the first and second channels. Bias signals fed to the bias circuits and coupled to the input electrodes place the FETS in an "on" state to provide gain to r.f. input signals fed thereto, or in a "pinch-off" state to isolate r.f. signals fed to the input electrodes of the FETS. Accordingly, a 2.times.1 switch or a two way active r.f. combiner which provides gain to a signal is provided.
REFERENCES:
patent: 4486719 (1984-12-01), Ayasli
patent: 4660006 (1987-04-01), Tajima et al.
Ayasli Yalcin
Tsukii Toshikazu
LaRoche Eugene R.
Maloney Denis G.
Mottola Steven J.
Raytheon Company
Sharkansky Richard M.
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