Dissolution inhibitors in photoresist compositions for...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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C430S326000, C430S905000, C430S907000, C430S311000, C430S271100, C430S272100

Reexamination Certificate

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07108953

ABSTRACT:
The invention relates to a photoresist composition comprising a polymeric binder; a photoactive component; and at least one dissolution inhibitor comprising a paraffinic or cycloparaffinic compound containing at least one functional group having the structure —C(Rf)(Rf′)OR wherein Rfand Rf′ are the same or different fluoroalkyl groups of from one or taken together are (CF2)awherein a is an integer ranging from 2 to about 10 and R is a hydrogen atom or an acid labile protecting group. Typically, the dissolution inhibitor has an absorption coefficient of less than about 4.0 μm at a wavelength of 157 nm.

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patent: WO 00/25178 (2000-05-01), None
L. F. Thompson, C. G. Willson, and M. J. Bowden, “Organic Resist Materials”, Introduction to Microlithography, 1994, pp. 139-267, Second Edition, American Chemical Society, Washington, DC.
E. Reichmanis et al., “The Effect of Substituents on the Photosensitivity of 2-Nitrobenzyl Ester Deep U.V. Resists,” J. Electrochem. Soc., 1983, pp. 1433-1437, vol. 130.
K. Patterson, et al., “Polymers for 157 nm Photoresist Applications: A Progress Report,” Proceedings of the SPIE, The International Society for Optical Engineering, 2000, pp. 365-374, vol. 39999, No. 1, XP-002200721.
K. J. Przybilla, et al., “Hexafluoroacetone in Resist Chemistry: A Versatile New Concept for Materials for Deep UV Lithography,” Proceedings of the SPIE, The International Society for Optical Engineering, 1992, pp. 500-512, vol. 1672, No. 1, XP 000912223.

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