Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2006-02-21
2006-02-21
Garbowski, Leigh M. (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000, C430S030000
Reexamination Certificate
active
07003757
ABSTRACT:
Techniques for fabricating a device include forming a fabrication layout, such as a mask layout, for a physical design layer, such as a design for an integrated circuit, and identifying evaluation points on an edge of a polygon corresponding to the design layer for correcting proximity effects. Techniques include selecting from among all edges of all polygons in a proposed layout a subset of edges for which proximity corrections are desirable. The subset of edges includes less than all the edges. Evaluation points are established only for the subset of edges. Corrections are determined for at least portions of the subset of edges based on an analysis performed at the evaluation points. Other techniques include establishing a projection point on a first edge corresponding to the design layout based on whether a vertex of a second edge is within a halo distance. An evaluation point is determined for the first edge based on the projection point and characteristics of the first edge. It is then determined how to correct at least a portion of the edge for proximity effects based on an analysis at the evaluation point.
REFERENCES:
patent: 4231811 (1980-11-01), Somekh et al.
patent: 4426584 (1984-01-01), Bohlen et al.
patent: 4456371 (1984-06-01), Lin
patent: 4812962 (1989-03-01), Witt
patent: 4895780 (1990-01-01), Nissan-Cohen et al.
patent: 4902899 (1990-02-01), Lin et al.
patent: 5051598 (1991-09-01), Ashton et al.
patent: 5182718 (1993-01-01), Harafuji et al.
patent: 5208124 (1993-05-01), Sporon-Fiedler et al.
patent: 5241185 (1993-08-01), Meiri et al.
patent: 5242770 (1993-09-01), Chen et al.
patent: 5256505 (1993-10-01), Chen et al.
patent: 5316878 (1994-05-01), Saito et al.
patent: 5326659 (1994-07-01), Liu et al.
patent: 5340700 (1994-08-01), Chen et al.
patent: 5424154 (1995-06-01), Borodovsky
patent: 5432714 (1995-07-01), Chung et al.
patent: 5447810 (1995-09-01), Chen et al.
patent: 5498579 (1996-03-01), Borodovsky et al.
patent: 5533148 (1996-06-01), Sayah et al.
patent: 5538815 (1996-07-01), Oi et al.
patent: 5553273 (1996-09-01), Liebmann
patent: 5553274 (1996-09-01), Liebmann
patent: 5572598 (1996-11-01), Wihl et al.
patent: 5631110 (1997-05-01), Shioiri et al.
patent: 5636002 (1997-06-01), Garofalo
patent: 5657235 (1997-08-01), Liebmann et al.
patent: 5663017 (1997-09-01), Schinella et al.
patent: 5663893 (1997-09-01), Wampler et al.
patent: 5682323 (1997-10-01), Pasch et al.
patent: 5702848 (1997-12-01), Spence
patent: 5705301 (1998-01-01), Garza et al.
patent: 5707765 (1998-01-01), Chen
patent: 5723233 (1998-03-01), Garza et al.
patent: 5740068 (1998-04-01), Liebmann et al.
patent: 5766806 (1998-06-01), Spence
patent: 5792581 (1998-08-01), Ohnuma
patent: 5795688 (1998-08-01), Burdorf et al.
patent: 5801954 (1998-09-01), Le et al.
patent: 5804340 (1998-09-01), Garza et al.
patent: 5815685 (1998-09-01), Kamon
patent: 5821014 (1998-10-01), Chen et al.
patent: 5825647 (1998-10-01), Tsudaka
patent: 5827623 (1998-10-01), Ishida et al.
patent: 5847959 (1998-12-01), Veneklasen et al.
patent: 5849440 (1998-12-01), Lucas et al.
patent: 5862058 (1999-01-01), Samuels et al.
patent: 5863682 (1999-01-01), Abe et al.
patent: 5879844 (1999-03-01), Yamamoto et al.
patent: 5885734 (1999-03-01), Pierrat et al.
patent: 5885748 (1999-03-01), Ohnuma
patent: 5900338 (1999-05-01), Garza et al.
patent: 5958635 (1999-09-01), Reich et al.
patent: 5972541 (1999-10-01), Sugasawara et al.
patent: 5991006 (1999-11-01), Tsudaka
patent: 5994002 (1999-11-01), Matsuoka
patent: 6004702 (1999-12-01), Lin
patent: 6007310 (1999-12-01), Jacobsen et al.
patent: 6014456 (2000-01-01), Tsudaka
patent: 6042257 (2000-03-01), Tsudaka
patent: 6058203 (2000-05-01), Tsudaka
patent: 6067375 (2000-05-01), Tsudaka
patent: 6077310 (2000-06-01), Yamamoto et al.
patent: 6078738 (2000-06-01), Garza, et al.
patent: 6081658 (2000-06-01), Rieger et al.
patent: 6114071 (2000-09-01), Chen et al.
patent: 6145118 (2000-11-01), Tomita
patent: 6154563 (2000-11-01), Tsudaka
patent: 6243855 (2001-06-01), Kobayashi et al.
patent: 6249597 (2001-06-01), Tsudaka
patent: 6289499 (2001-09-01), Rieger et al.
patent: 6298473 (2001-10-01), Ono et al.
patent: 6370441 (2002-04-01), Ohnuma
patent: 6453457 (2002-09-01), Pierrat et al.
patent: 6610989 (2003-08-01), Takahashi
patent: 2002/0100004 (2002-07-01), Pierrat, et al.
patent: 2324169 (1998-10-01), None
patent: 3-80525 (1991-04-01), None
patent: 3-210560 (1991-09-01), None
patent: 8-236317 (1996-09-01), None
patent: 10-133356 (1998-05-01), None
patent: 11-143085 (1999-05-01), None
patent: WO 99/47981 (1999-09-01), None
patent: WO 00/67074 (2000-11-01), None
patent: WO 00/67076 (2000-11-01), None
Barouch, E., et al., “Optimask: An OPC Algorithm for Chrome and Phase-Shift Mask Design”, Feb. 22-24, 1995, SPIE vol. 2440, pp. 192-206.
Brunner, T., et al., “Approximate Models for Resist Processing Effects”, 198/SPIE vol. 2726, Optical Microlithography IX, Mar. 13-15, 1996, pp. 198-209.
Brunner, T, “Rim Phase-Shift Mask Combined with Off-Axis Illumination: A Path to 0.5λNumerical Aperture Geometries”, Optical Engineering, Oct. 1993, vol. 32 No. 10, pp. 2337-2343.
Casey, J. Jr., et al., “Chemically Enhanced FIB Repair of Opaque Defects on Molybdenum Silicide Photomasks”, Wednesday Poster Session Paper 3236-58, Photomask Technology and Management Technical Program, (1997), SPIE vol. 3236, pp. 487-497.
Chang, K., et al., “Accurate Modeling of Deep Submicron Interconnect Technology”, TMA Times, Fall 1997 vol. IX, No. 3.
Cobb, et al., “Fast Sparse Aerial Image Calculation for OPC”SPIE vol. 2621, pp. 534-544.
Gans, F., et al., “Printability and Repair Techniques for DUV Photomasks”, Photomask Technology and Management Technical Program, Session 3 Paper, (1998), pp. 136-141.
Ham, Y. M., et al., “Dependence of Defects in Optical Lithography”, Jpn. J. Appl. Phys. vol. 31 (1992), pp. 4137-4142.
Henke, W., et al., “A Study of Reticle Defects Imaged Into Three-Dimensional Developed Profiles of Positive Photresist Using the SOILD Lithography Simulator”, Microelectronic Engineering 14 (1991) 283-297.
Ibsen, K., et al., “Clear Field Reticle Defect Disposition for Advanced Sub-Half Micron Lithography”, (1997), Photomask Technology and Management Technical Program, Session 3 Paper 3236-13.
Ishiwata, N., et al., “Novel Alternating Phase Shift Mask with Improved Phase Accuracy”, Photomask Technology and Management Technical Program, Session 7 Paper 3236-28, SPIE vol. 3236.
Jinbo, H., et al., “0.2μm OR Less i-Line Lithography by Phase-Shifting-Mask Technology”, Semiconductor Technology Lab., Oki Electric Industry Co., Ltd., CH2865-4/90/0000-0825, pp. 33.3.1-33.3.4.
Jinbo, H., et al., “Application of Blind Method to Phase-Shifting Lithography”, 1992 Symposium on VLSI Technology Digest of Technical Papers, pp. 112-113.
Jinbo, H., “Improvement of Phase-Shifter Edge Line Mask Method”. Japanese Journal of Applied Physics, vol. 30, No. 11B, Nov., 1991, pp. 2998-3003.
Karklin, Linard, “A Comprehensive Simulation Study of the Photomask Defects Printability”, SPIE vol. 2621, pp. 490-504.
Kimura, T., et al., “Subhalf-Micron Gate GaAs Mesfet Mesfet Process Using Phase-Shifting-Mask Technology”, GaAs IC Symposium, 1991, pp. 281-284.
Lithas: Optical Proximity Correction Software.
MicroUnity: OPC Technology & Product Description, pp. 1-5.
Morimoto, H., et al., “Next Generation Mask Strategy-Technologies are Ready for Mass Production of 256MDRAM?”, (Panel discussion of PMJ'97 on Apr. 18, 1997), SPIE vol. 3236 pp. 188-189.
Nistler, J., et al., “Large Area Optical Desigh Rule Checker for Logic PSM Application”, SPIE vol. 2254 Photomask and X-Ray Mask Technology (1994), pp. 78-92.
Nistler, J., et al., “Phase Shift Mask Defect Printability Analysis”, Eytan Barouch and Uwe Hollerbach, Princeton University, Princeton, NJ, pp. 11-27.
Ohtsuka, H., et al.,
Pierrat Christophe
Zhang Youping
Bever Hoffman & Harms LLP
Garbowski Leigh M.
Harms Jeanette S.
Synopsys Inc.
LandOfFree
Dissection of edges with projection points in a fabrication... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Dissection of edges with projection points in a fabrication..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dissection of edges with projection points in a fabrication... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3700646