Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-12-27
2011-10-11
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257SE27130, C257SE31097, C438S030000, C349S113000
Reexamination Certificate
active
08035102
ABSTRACT:
An improved display substrate is provided to reduce surface defects on insulating layers of organic thin film transistors. Related methods of manufacture are also provided. In one example, a display substrate includes a base, a plurality of data lines, a plurality of gate lines, a pixel defined by the data lines and the gate lines, an organic thin film transistor, and a pixel electrode. The data lines are on the base and are oriented in a first direction. The gate lines are oriented in a second direction that crosses the first direction. The organic thin film transistor includes a source electrode electrically connected to one of the data lines, a gate electrode electrically connected to one of the gate lines, and an organic semiconductor layer. The pixel electrode is disposed in the pixel and electrically connected to the organic thin film transistor. The pixel electrode comprises a transparent oxynitride.
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Kang Sung-Wook
Kim Bo-Sung
Kim Young-Min
Lee Je-Hun
Lee Jun-Young
Gordon Matthew
Innovation Counsel LLP
Malsawma Lex
Samsung Electronics Co,. Ltd.
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