Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-04-19
2011-04-19
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S350000, C257SE29151
Reexamination Certificate
active
07928440
ABSTRACT:
A display substrate includes a base substrate, a gate line, a gate insulation layer, a data line, a thin-film transistor (TFT) and a pixel electrode. The gate line is extended in a first direction on the base substrate. The gate insulation layer is formed on the base substrate to cover the gate line. The data line is extended in a second direction and intersects the gate line at an intersecting portion. At the intersecting portion, the data line is separated from the gate line by an air gap. In another embodiment, the data line also includes at least one etching hole extending to the air gap. The TFT is electrically connected to the data and the gate lines. The pixel electrode is electrically connected to the TFT.
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patent: 2007/0170855 (2007-07-01), Choi et al.
patent: 2009/0027604 (2009-01-01), Guo et al.
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Kim Jong-In
Kim Ki-Won
Lee Woo-Geun
Youn Jae-Hyoung
Innovation Counsel LLP
Ngo Ngan
Samsung Electronics Co,. Ltd.
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