Display substrate having vertical thin film transistor...

Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide

Reexamination Certificate

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Details

C257S072000, C257S328000, C257S330000, C257SE29274

Reexamination Certificate

active

08067767

ABSTRACT:
A display substrate according to the present invention comprises a gate line formed on a substrate, a data line, a thin film transistor connected to the gate line and the data line respectively and pixel electrode connected to the thin film transistor, wherein a channel of the thin film transistor is formed in a direction perpendicular to the substrate and, a layer where the channel is formed includes an oxide semiconductor pattern. ON current of thin film transistor of the display substrate can be increased without loss of aperture ratio.

REFERENCES:
patent: 6800874 (2004-10-01), Hsieh
patent: 6995053 (2006-02-01), Schuele et al.
patent: 7235437 (2007-06-01), Schuele et al.
patent: 7250627 (2007-07-01), Hoffman
patent: 2003/0218222 (2003-11-01), Wager et al.
patent: 2005/0206798 (2005-09-01), Kim
patent: 2007/0023750 (2007-02-01), Chiang et al.
patent: 2008/0014686 (2008-01-01), Wang et al.
patent: 2009/0289249 (2009-11-01), Kato et al.
patent: 2006-269323 (2006-10-01), None
patent: 10-2000-0021376 (2000-04-01), None
patent: 10-2000-0038333 (2000-07-01), None
patent: 10-2003-0050669 (2003-06-01), None

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