Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-08-30
2011-08-30
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S366000, C257S072000, C257SE21413, C257SE21414, C349S114000, C349S113000, C349S115000, C349S138000
Reexamination Certificate
active
08008662
ABSTRACT:
A display substrate having a low-resistance metallic layer and a method of manufacturing the display substrate. The gate conductors are extended in a first direction. The source conductors are extended in a second direction crossing the first direction including a lower layer of molybdenum or a molybdenum alloy, and an upper layer of aluminum or an aluminum alloy. The pixel areas are defined by the gate conductors and the source conductors. A switching element is formed in each of the pixel areas and includes a gate electrode extended from the gate conductor and a source electrode extended from the source conductor. The pixel electrode includes a transparent conductive material, and is electrically connected to a drain electrode of the switching element.
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Kang Sung-Wook
Kim Joo-Han
Lee Jun-young
Oh Min-Seok
Green Telly D
Innovation Counsel LLP
Samsung Electronics Co,. Ltd.
Smith Zandra
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