Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-08-16
2011-08-16
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000
Reexamination Certificate
active
07999260
ABSTRACT:
In a display substrate and a method of the display substrate, a bank pattern provided with openings formed therethrough is formed by an imprint method, and the openings are filled with a conductive material by an inkjet method to form a data line and a pixel electrode, in accordance with one or more embodiments. When the display substrate is manufactured, a patterning process by a photolithography method may be replaced with the patterning process by the imprint method and the inkjet method, which simplifies a manufacturing method of the display substrate. In case that the display substrate includes a plastic substrate, the plastic substrate may be prevented from being deformed during a photolithography process.
REFERENCES:
patent: 2005/0153476 (2005-07-01), Park et al.
patent: 2007/0122649 (2007-05-01), Lee et al.
Bae Ju-Han
Jeon Hyung-Il
Kim Kyu-Young
Park Dae-Jin
Bryant Kiesha R
Innovation Counsel LLP
Samsung Electronics Co,. Ltd.
Wright Tucker
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