Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-02-27
2007-02-27
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S487000, C257SE21134
Reexamination Certificate
active
10914333
ABSTRACT:
An amorphous silicon film on an insulating substrate portion to be formed as an individual display panel in a large-sized insulating substrate is irradiated with a continuous-wave (CW) solid-state laser beam condensed linearly, while being scanned therewith at a fixed speed in the width direction of the condensed laser beam. A pixel portion and a peripheral circuit portion in the same insulating substrate portion are irradiated with the laser beam temporally modulated to have a power density high enough to provide predetermined crystallinity. The amorphous silicon film is transformed into a silicon film having crystallinity corresponding to performance required for thin film transistors to be built in each of the pixel portion and the peripheral circuit portion. In such a manner, a thin film transistor circuit having optimum crystallinity required in the pixel or peripheral circuit portion can be obtained while high throughput is kept. Thus, a product having good display features as a display panel can be provided inexpensively.
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Hatano Mutsuko
Hongo Mikio
Ohkura Makoto
Saito Hiroshi
Yazaki Akio
Chaudhari Chandra
Hitachi Displays Ltd.
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