Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-05-06
2009-12-01
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257S059000, C257SE29291, C257SE21627, C257S057000, C438S674000, C438S678000
Reexamination Certificate
active
07625788
ABSTRACT:
A display element and a method of manufacturing the same are provided. The method comprises the following steps: forming a first patterned conducting layer with a gate on a substrate and a dielectric layer thereon; forming a patterned semiconductor layer on the dielectric layer, wherein the patterned semiconductor layer has a channel region, a source and a drain, and wherein the source and the drain lie on the opposite sides of the channel region; selectively depositing a barrier layer, which only wraps the patterned semiconductor layer; forming a second patterned conducting layer on the barrier layer and above the source and the drain. In the display element manufactured by the method, the barrier layer only wraps the patterned semiconductor layer.
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English language translation of abstract of CN 1889272, Pub. date: Jul. 28, 2006.
Chen Po-Lin
Lin Chun-Nan
Tsai Wen-Ching
Tu Kuo-Yuan
Au Optronics Corp.
Dehne Aaron A
Nguyen Ha Tran T
Thomas Kayden Horstemeyer & Risley
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