Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1999-01-04
2000-12-26
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 69, 257 72, 257347, 257348, 257349, 257350, 257351, 257352, 257353, 257354, 257355, H01L 2900
Patent
active
061663972
ABSTRACT:
A display device having high definition and high reliability, and technology for manufacturing the same. In an active matrix type display device of integrated peripheral driving circuit type, pixel TFTs of an active matrix circuit 100 are not provided with LDD regions. Also, among circuits constituting peripheral driving circuits 101, 102, buffer circuits, of which a high withstand voltage and high-speed operation are required, are made with thin film transistors having floating island regions and base regions between source and drain regions of their active layers.
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Hayashi et al., Fabrication of Low-Temperature Bottom-Gate Poly-Si TFTs on Large-Area Substrate by Linear-Beam Excimer Laser Crystallization and Ion Doping Method, IEDM 95 829-832 (1995).
Yamazaki Shunpei
Zhang Hongyong
Abraham Fetsum
Semiconductor Energy Laboratory Co,. Ltd.
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