Method of making a self-aligned bipolar using differential oxida

Details Method of making a self-aligned bipolar using differential oxida Method of making a self-aligned bipolar using differential oxida

1986-02-25

1988-03-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 46, 437 69, 437151, 437162, 437985, 357 34, 357 50, 357 59H, H01L 21265, H01L 21302, H01L 21283, H01L 2120

Patent

active

047286180

ABSTRACT:
A method for manufacturing semiconductor device with improved frequency characteristics is provided. The base resistance and the base-to-collector capacitance are reduced by minimizing a base area and a space between an emitter and the base. The minimization of the base area is brought about by forming the emitter region in the base region by self-aligned process. The minimization of the space between the emitter and the base is accomplished by presenting only an insulator layer between a silicon layer on the emitter region and a metal wiring on the base region.

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C. G. Jambotkar, "Emitter Butting Against Recessed Oxide Isolation . . . ", TDB, vol. 27, No. 3, Aug. 1984, p. 1809.

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