Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-03-24
2011-11-01
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S406000, C438S412000, C438S458000, C438S459000, C257SE21411, C257SE21568, C257SE21602, C257SE27112, C257SE29286
Reexamination Certificate
active
08048728
ABSTRACT:
A manufacturing method is provided which achieves an SOI substrate with a large area and can improve productivity of manufacture of a display device using the SOI substrate. A plurality of single-crystalline semiconductor layers are bonded to a substrate having an insulating surface, and a circuit including a transistor is formed using the single-crystalline semiconductor layers, so that a display device is manufactured. Single-crystalline semiconductor layers separated from a single-crystalline semiconductor substrate are applied to the plurality of single-crystalline semiconductor layers. Each of the single-crystalline semiconductor layers has a size corresponding to one display panel (panel size).
REFERENCES:
patent: 4566175 (1986-01-01), Smayling et al.
patent: 4669177 (1987-06-01), D'Arrigo et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5413951 (1995-05-01), Ohori et al.
patent: 5524339 (1996-06-01), Gorowitz et al.
patent: 5559043 (1996-09-01), Bruel
patent: 5567654 (1996-10-01), Beilstein et al.
patent: 5618739 (1997-04-01), Takahashi et al.
patent: 5622896 (1997-04-01), Knotter et al.
patent: 6013563 (2000-01-01), Henley et al.
patent: 6020252 (2000-02-01), Aspar et al.
patent: 6127702 (2000-10-01), Yamazaki et al.
patent: 6190998 (2001-02-01), Bruel et al.
patent: 6225192 (2001-05-01), Aspar et al.
patent: 6242320 (2001-06-01), So
patent: 6271101 (2001-08-01), Fukunaga
patent: 6312797 (2001-11-01), Yokokawa et al.
patent: 6335231 (2002-01-01), Yamazaki et al.
patent: 6337288 (2002-01-01), Ohya et al.
patent: 6372609 (2002-04-01), Aga et al.
patent: 6380046 (2002-04-01), Yamazaki
patent: 6388652 (2002-05-01), Yamazaki et al.
patent: 6602761 (2003-08-01), Fukunaga
patent: RE38296 (2003-11-01), Moriuchi et al.
patent: 6686623 (2004-02-01), Yamazaki
patent: 6759277 (2004-07-01), Flores et al.
patent: 6778164 (2004-08-01), Yamazaki et al.
patent: 6803264 (2004-10-01), Yamazaki et al.
patent: 6818529 (2004-11-01), Bachrach et al.
patent: 6875633 (2005-04-01), Fukunaga
patent: 6908797 (2005-06-01), Takano
patent: 6946365 (2005-09-01), Aspar et al.
patent: 7119365 (2006-10-01), Takafuji et al.
patent: RE39484 (2007-02-01), Bruel
patent: 7176525 (2007-02-01), Fukunaga
patent: 7176528 (2007-02-01), Couillard et al.
patent: 7192844 (2007-03-01), Couillard et al.
patent: 7199024 (2007-04-01), Yamazaki
patent: 7253040 (2007-08-01), Itoga et al.
patent: 7256776 (2007-08-01), Yamazaki et al.
patent: 7358158 (2008-04-01), Aihara et al.
patent: 7399681 (2008-07-01), Couillard et al.
patent: 7476940 (2009-01-01), Couillard et al.
patent: 7508034 (2009-03-01), Takafuji et al.
patent: 7605053 (2009-10-01), Couillard et al.
patent: 7619250 (2009-11-01), Takafuji et al.
patent: 7632739 (2009-12-01), Hebras
patent: 7790570 (2010-09-01), Yamazaki
patent: 7816736 (2010-10-01), Yamazaki
patent: 7834398 (2010-11-01), Yamazaki
patent: 7838935 (2010-11-01), Couillard et al.
patent: 2002/0109144 (2002-08-01), Yamazaki
patent: 2003/0183876 (2003-10-01), Takafuji et al.
patent: 2004/0061176 (2004-04-01), Takafuji et al.
patent: 2004/0092087 (2004-05-01), Aspar et al.
patent: 2004/0104424 (2004-06-01), Yamazaki
patent: 2004/0238851 (2004-12-01), Flores et al.
patent: 2005/0009252 (2005-01-01), Yamazaki et al.
patent: 2005/0032283 (2005-02-01), Itoga et al.
patent: 2005/0098827 (2005-05-01), Kanegae
patent: 2005/0260800 (2005-11-01), Takano
patent: 2006/0038228 (2006-02-01), Aitken et al.
patent: 2006/0099773 (2006-05-01), Maa et al.
patent: 2006/0110899 (2006-05-01), Bourdelle et al.
patent: 2007/0020947 (2007-01-01), Daval et al.
patent: 2007/0063281 (2007-03-01), Takafuji et al.
patent: 2007/0087488 (2007-04-01), Moriwaka
patent: 2007/0108510 (2007-05-01), Fukunaga
patent: 2007/0173000 (2007-07-01), Yamazaki
patent: 2007/0184632 (2007-08-01), Yamazaki et al.
patent: 2007/0291022 (2007-12-01), Yamazaki et al.
patent: 2008/0061301 (2008-03-01), Yamazaki
patent: 2008/0067529 (2008-03-01), Yamazaki
patent: 2008/0171443 (2008-07-01), Hebras
patent: 2008/0213953 (2008-09-01), Yamazaki
patent: 2008/0237779 (2008-10-01), Yamazaki et al.
patent: 2008/0237780 (2008-10-01), Yamazaki et al.
patent: 2008/0246109 (2008-10-01), Ohnuma et al.
patent: 2008/0286941 (2008-11-01), Yamazaki
patent: 2008/0286942 (2008-11-01), Yamazaki
patent: 2009/0023267 (2009-01-01), Daval et al.
patent: 2009/0023271 (2009-01-01), Couillard et al.
patent: 2009/0095956 (2009-04-01), Takafuji et al.
patent: 2009/0107967 (2009-04-01), Sakamoto et al.
patent: 2010/0019242 (2010-01-01), Takafuji et al.
patent: 1045448 (2000-10-01), None
patent: 64-061943 (1989-03-01), None
patent: 05-211128 (1993-08-01), None
patent: 11-045862 (1999-02-01), None
patent: 11-163363 (1999-06-01), None
patent: 2000-012864 (2000-01-01), None
patent: 2002-198328 (2002-07-01), None
patent: 2003-282885 (2003-10-01), None
patent: 2003-324188 (2003-11-01), None
patent: 2004-260170 (2004-09-01), None
patent: 2004-356537 (2004-12-01), None
patent: 2005-056917 (2005-03-01), None
patent: 2005-252244 (2005-09-01), None
patent: WO-00/24059 (2000-04-01), None
patent: WO-2008/087516 (2008-07-01), None
International Search Report (Application No. PCT/JP2008/055172) dated Jun. 24, 2008.
Written Opinion (Application No. PCT/JP2008/055172) dated Jun. 24, 2008.
International Search Report (Application No. PCT/JP2008/055168) dated Jun. 24, 2008.
Written Opinion (Application No. PCT/JP2008/055168) dated Jun. 24, 2008.
International Search Report (Application No. PCT/JP2008/055167) dated Jun. 17, 2008.
Written Opinion (Application No. PCT/JP2008/055167) dated Jun. 17, 2008.
Qiao.F et al., “Ion-Cutting of Si Onto Glass by Pulsed and Direct-Current Plasma Immersion Ion Implantation,” J. Vac. Sci. Technol. B. (Journal of Vacuum Science & Technology B), 2003, vol. 21, No. 5, pp. 2109-2113.
Lu. F et al., “Ion-Cutting of Si Onto Glass by Pulsed and Direct-Current Plasma Immersion Ion Implantation,” J. Vac. Sci. Technol. B (Journal of Vacuum Science & Technology B), 2003, vol. 21, No. 5, pp. 2109-2113.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Thomas Toniae
Wilczewski Mary
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