Display device having oxide thin film transistor and...

Details Display device having oxide thin film transistor and... Display device having oxide thin film transistor and...

2011-08-02

2011-08-02

Pham, Hoai v (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C257SE21320, C257SE21561

Reexamination Certificate

active

07989274

ABSTRACT:
A display device including an oxide thin film transistor (TFT) is disclosed. A nitride-based gate insulating layer of a gate pad area is etched when an oxide semiconductor layer of a pixel area is etched by using a half-tone mask, a metal layer is formed at a contact hole of the etched gate insulting layer, and then a passivation layer formed thereon is etched. Thus, an overhang of the passivation layer can be prevented from being generated when the gate insulating layer is etched, and accordingly, the fabrication process can be simplified.

REFERENCES:
patent: 7781268 (2010-08-01), Byun et al.

Affiliated with

Also associated with

Rating

Display device having oxide thin film transistor and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Display device having oxide thin film transistor and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Display device having oxide thin film transistor and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2778464