Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-12-12
2009-11-24
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S040000, C257S072000, C257SE21002, C257SE33001, C438S030000, C438S133000, C438S158000
Reexamination Certificate
active
07622738
ABSTRACT:
An display device having a thin film transistor with improved characteristics comprising a gate conductor including a gate electrode formed on an insulating substrate; a gate insulating layer formed on the gate electrode; a conductive layer comprising a plurality of layers including a source electrode and a drain electrode formed on the gate insulating layer and separated from each other across the gate electrode to define a channel region; and an organic semiconductor layer formed in the channel region, wherein the conductive layer comprises a metal layer and a transparent electrode layer.
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Oh Joon-hak
Song Keun-kyu
Innovation Counsel LLP
Le Dung A.
Samsung Electronics Co,. Ltd.
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