Display device having a multi-layer conductive layer and...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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Details

C257S040000, C257S072000, C257SE21002, C257SE33001, C438S030000, C438S133000, C438S158000

Reexamination Certificate

active

07622738

ABSTRACT:
An display device having a thin film transistor with improved characteristics comprising a gate conductor including a gate electrode formed on an insulating substrate; a gate insulating layer formed on the gate electrode; a conductive layer comprising a plurality of layers including a source electrode and a drain electrode formed on the gate insulating layer and separated from each other across the gate electrode to define a channel region; and an organic semiconductor layer formed in the channel region, wherein the conductive layer comprises a metal layer and a transparent electrode layer.

REFERENCES:
patent: 6674106 (2004-01-01), Tanaka et al.
patent: 6821811 (2004-11-01), Hirakata et al.
patent: 7208756 (2007-04-01), Shih et al.
patent: 2005/0045885 (2005-03-01), Kim et al.
patent: 2005/0279999 (2005-12-01), Lee et al.
patent: 2006/0214154 (2006-09-01), Yang et al.
patent: 2004-080026 (2004-03-01), None
patent: 2004-146430 (2004-05-01), None
patent: 1020050023012 (2005-03-01), None
English Language Abstract, KR Patent First Publication No. 1020050023012, Mar. 9, 2005, 1 page.
English Language Abstract, JP Patent First Publication No. 2004-080026, Mar. 11, 2004, 1 page.
English Language Abstract, JP Patent First Publication No. 2004-146430, May 20, 2004, 1 page.

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