Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-16
2007-01-16
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S431000, C257S461000, C257S463000, C257SE27133, C257SE25032, C257SE31115
Reexamination Certificate
active
10924940
ABSTRACT:
A display device has display elements provided inside of pixels, each being formed in vicinity of intersections of signal lines and scanning lines aligned in matrix form; and photoelectric conversion elements, wherein each of the photoelectric conversion elements includes first, second and third semiconductor regions disposed adjacently in sequence in parallel to a surface of a substrate; a first electrode connected to the first semiconductor region; and a second electrode connected to the third semiconductor region, the first semiconductor region being formed by injecting a first conductive impurity in first dose amount; the third semiconductor region being formed by injecting a second conductive impurity in second dose amount; and the second semiconductor region being formed by injecting the first conductive impurity in third dose amount less than the first dose amount.
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Nakamura Takashi
Tada Masahiro
Tada Norio
Huynh Andy
Toshiba Matsushita Display Technology Co., Ltd.
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