Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-05
2011-11-01
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S149000, C257S223000, C257S343000, C257S493000, C257S655000, C257SE23112, C257SE23016, C257SE27125, C257SE29117
Reexamination Certificate
active
08049255
ABSTRACT:
A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the insulating substrate. The semiconductor layer includes an active layer composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode. The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face facing an etched side face of the active layer. Each contact layer segment is disposed between the active layer and each of the first and second faces of the source or drain electrode.
REFERENCES:
patent: 5286659 (1994-02-01), Mitani et al.
patent: 5355002 (1994-10-01), Wu
patent: 5474941 (1995-12-01), Mitani et al.
patent: 5917199 (1999-06-01), Byun et al.
patent: 5989944 (1999-11-01), Yoon
patent: 6160268 (2000-12-01), Yamazaki
patent: 6451632 (2002-09-01), Sung
patent: 6788376 (2004-09-01), Izumi et al.
patent: 2002/0004291 (2002-01-01), Yamazaki
patent: 2005/0070055 (2005-03-01), Kunii
patent: 2007/0034879 (2007-02-01), Park et al.
patent: 2007/0065991 (2007-03-01), Kim et al.
patent: 2007/0134856 (2007-06-01), Jang et al.
patent: 2008/0061295 (2008-03-01), Wang et al.
patent: 2008/0206923 (2008-08-01), Kim et al.
patent: 10-0671824 (2007-01-01), None
T. Tanaka, et al., “An LCD Addressed by a-Si:H TFTs with Peripheral poly-Si TFT Circuits”, Hitachi Research Laboratory, IEEE, 1993, pp. IEDM 93-389-392.
M. Yuki, et al, “A Full Color LCD Addressed by Poly Si TFTS Fabricated at Low Temperature Below 450° C.”, 1988 International Display Research Conference, IEEE, 1988, pp. 220-221.
Extended European Search Report for Application No. 08010269.2-1528/2001046, dated Dec. 8, 2010.
Kaitoh Takuo
Miyake Hidekazu
Miyazawa Toshio
Sakai Takeshi
A. Marquez, Esq. Juan Carlos
Hitachi Displays Ltd.
Kim Su
Smith Matthew
Stites & Harbison PLLC
LandOfFree
Display device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Display device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Display device and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4298431