Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-07-14
2009-02-10
Connelly Cushwa, Michelle R (Department: 2874)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S431000, C438S029000, C438S030000, C349S143000
Reexamination Certificate
active
07488977
ABSTRACT:
A display device, and method for making the same, comprising a thin film transistor formed on a first insulating substrate, a pixel electrode electrically connected to the thin film transistor, an organic layer formed on the pixel electrode, a common electrode formed on the organic layer, a conductive layer formed on the common electrode, a transparent electrode layer formed on the conductive layer, the transparent electrode being applied with a common voltage, and a second insulating substrate located on the transparent electrode layer. Thus, the present invention provides a display device to which common voltage is applied effectively.
REFERENCES:
patent: 2006/0044232 (2006-03-01), Choi et al.
patent: 2006/0197086 (2006-09-01), Rhee et al.
patent: 2005-158493 (2005-06-01), None
patent: 1020040094057 (2004-11-01), None
patent: 1020040104172 (2004-12-01), None
Kim Hoon
Lee Sang-pil
Sung Un-cheol
Cantor & Colburn LLP
Connelly Cushwa Michelle R
Samsung Electronics Co,. Ltd.
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