Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-02-20
2007-02-20
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S066000, C257S059000, C257S088000, C257SE29277, C345S044000, C345S082000, C368S241000, C438S048000, C438S128000, C438S149000, C438S151000
Reexamination Certificate
active
10780724
ABSTRACT:
In a display device including thin film transistors formed on an insulation substrate, the thin film transistor includes a semiconductor layer, a gate electrode and a gate insulation film which is interposed between the semiconductor layer and the gate electrode. The gate insulation film includes at least one layer of deposition film which is deposited by a deposition method, and the carbon concentration of the gate insulation film which is formed without interposing other deposition film deposited by a deposition method between the one deposition film and the semiconductor layer has the distribution in which the carbon concentration is smaller at a side close to the semiconductor layer than at a side remote from the semiconductor layer. Due to such a constitution, it is possible to obviate the elevation of a level of an interface of the insulation film with respect to a poly silicon layer and it is also possible to obviate an increase of fixed charges in the inside of the insulation film in the thin film transistor.
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Itoga Toshihiko
Kaitoh Takuo
Kamo Takahiro
Ohkura Makoto
Antonelli, Terry Stout and Kraus, LLP.
Hitachi Displays Ltd.
Wilson Scott R.
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