Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-01-22
2010-11-09
Tran, Minh-Loan T (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C257SE21440
Reexamination Certificate
active
07829395
ABSTRACT:
The present invention provides a method for manufacturing a display device which can reliably form electrodes in a thin film transistor. A method for manufacturing a display device includes the steps of: preparing a substrate having a sequentially stacked body formed of a gate signal line, an insulation film, a semiconductor layer and a conductor layer; forming a drain electrode and a source electrode of a thin film transistor at least in a region where the thin film transistor is formed in a pattern in which one of the drain electrode and the source electrode is formed in an approximately U shape having an open-ended one end side and a connecting portion on another end side such that one electrode surrounds a distal end portion of another electrode as viewed in a plan view and a projecting portion is formed on a side of the connecting portion opposite to another electrode, wherein the respective electrodes are formed by selectively etching the conductor layer using a photoresist film as a mask; and etching the semiconductor layer using a deformed photoresist film which is formed by directly reflowing the photoresist film as a mask.
REFERENCES:
patent: 6707107 (2004-03-01), Kido
patent: 3-233431 (1991-10-01), None
patent: 2002-83765 (2002-03-01), None
Ishii Miyo
Uehara Junichi
Watanabe Kunihiko
Antonelli, Terry Stout & Kraus, LLP.
Hitachi Displays Ltd.
IPS Alpha Technology, Ltd.
Tran Minh-Loan T
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